data sheet 1 05.99 sipmos power transistor product summary drain source voltage 55 v ds v drain-source on-state resistance w 0.01 r ds(on) i d continuous drain current 80 a features n channel enhancement mode avalanche rated logic level d v /d t rated 175?c operating temperature pin 1 pin 2 pin 3 g d s packaging type package ordering code buz110sl tube p-to220-3-1 q67040-s4004-a2 buz110sl e3045a tape and reel q67040-s4004-a6 p-to263-3-2 tube buz110sl e3045 p-to263-3-2 q67040-s4004-a5 maximum ratings , at t j = 25 ?c, unless otherwise specified parameter symbol unit value continuous drain current t c = 25 ?c t c = 100 ?c 80 59 i d a pulsed drain current t c = 25 ?c i dpulse 320 avalanche energy, single pulse i d = 80 a, v dd = 25 v, r gs = 25 w mj e as 460 avalanche energy, periodic limited by t j max 20 e ar reverse diode d v /d t i s = 80 a, v ds = 40 v, d i /d t = 200 a/s, t jmax = 175 ?c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c = 25 ?c p tot 200 w operating and storage temperature t j , t st g ?c -55... +175 55/175/56 iec climatic category; din iec 68-1 buz 110sl
buz 110sl data sheet 2 05.99 thermal characteristics parameter values symbol unit typ. max. min. characteristics r thjc - - 0.75 k/w thermal resistance, junction - case - thermal resistance, junction - ambient, leded r thja - 62 - - - - 62 40 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja electrical characteristics , at t j = 25 ?c, unless otherwise specified parameter symbol unit values min. max. typ. static characteristics drain- source breakdown voltage v gs = 0 v, i d = 0.25 ma - v (br)dss 55 - v gate threshold voltage, v gs = v ds i d = 200 a v gs(th) 2 1.6 1.2 zero gate voltage drain current v ds = 50 v, v gs = 0 v, t j = 25 ?c v ds = 50 v, v gs = 0 v, t j = 150 ?c - - i dss a 1 100 0.1 - gate-source leakage current v gs = 20 v, v ds = 0 v i gss - 10 na 100 drain-source on-state resistance v gs = 4.5 v, i d = 59 a v gs = 10 v, i d = 59 a r ds(on) - - 0.012 0.0075 0.015 0.01 w 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without blown air.
buz 110sl data sheet 3 05.99 electrical characteristics , at t j = 25 ?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2* i d * r ds(on)max , i d = 59 a g fs 30 67 - s input capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c iss - 2600 3250 pf output capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c oss - 750 940 reverse transfer capacitance v gs = 0 v, v ds = 25 v, f = 1 mhz c rss - 395 495 turn-on delay time v dd = 30 v, v gs = 4.5 v, i d = 80 a, r g = 2 w t d(on) - 20 30 ns rise time v dd = 30 v, v gs = 4.5 v, i d = 80 a, r g = 2 w t r - 70 105 turn-off delay time v dd = 30 v, v gs = 4.5 v, i d = 80 a, r g = 2 w t d(off) - 45 70 fall time v dd = 30 v, v gs = 4.5 v, i d = 80 a, r g = 2 w t f - 25 40
buz 110sl data sheet 4 05.99 electrical characteristics , at t j = 25 ?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics gate to source charge v dd = 40 v, i d = 80 a 19.5 nc 13 q gs - - 42 q gd gate to drain charge v dd = 40 v, i d = 80 a 63 gate charge total v dd = 40 v, i d = 80 a, v gs = 0 to 10 v - 110 165 q g gate plateau voltage v dd = 40 v, i d = 80 a v (plateau) 3.6 - v - reverse diode inverse diode continuous forward current t c = 25 ?c i s - - 80 a inverse diode direct current,pulsed t c = 25 ?c i sm - - 320 inverse diode forward voltage v gs = 0 v, i f = 160 a v sd - 1.2 v 2 reverse recovery time v r = 30 v, i f = i s , d i f /d t = 100 a/s t rr - 90 ns 135 reverse recovery charge v r = 30 v, i f = l s , d i f /d t = 100 a/s q rr - c 0.14 0.21
buz 110sl data sheet 5 05.99 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 140 160 ?c 190 t c 0 20 40 60 80 100 120 140 160 180 w 220 buz110sl p tot drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 ?c 190 t c 0 10 20 30 40 50 60 70 a 90 buz110sl i d transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w buz110sl z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 ?c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a buz110sl i d r ds(on) = v ds / i d dc 10 ms 1 ms 100 s 10 s t p = 8.7 s
buz 110sl data sheet 6 05.99 typ. output characteristics i d = f ( v ds ) parameter: t p = 80 s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v ds 0 20 40 60 80 100 120 140 160 a 190 buz110sl i d v gs [v] a a 2.5 b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l p tot = 200 w l 10.0 typ. drain-source-on-resistance r ds(on) = f ( i d ) parameter: v gs 0 20 40 60 80 100 120 140 a 170 i d 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 w 0.050 buz110sl r ds(on) v gs [v] = b b 3.0 c c 3.5 d d 4.0 e e 4.5 f f 5.0 g g 5.5 h h 6.0 i i 6.5 j j 7.0 k k 8.0 l l 10.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 1.0 1.5 2.0 2.5 3.0 v 4.0 v gs 0 10 20 30 40 50 60 a 80 i d typ. forward transconductance g fs = f ( i d ) ; t j = 25?c parameter: g fs 0 10 20 30 40 50 a 65 i d 0 5 10 15 20 25 30 35 40 45 50 55 60 s 70 g fs
buz 110sl data sheet 7 05.99 drain-source on-resistance r ds(on) = f ( t j ) parameter : i d = 59 a, v gs = 4.5 v -60 -20 20 60 100 140 ?c 200 t j 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0.045 w 0.055 buz110sl r ds(on) typ 98% gate threshold voltage v gs(th) = f ( t j ) parameter : v gs = v ds , i d = 200 a -60 -20 20 60 100 140 ?c 200 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v 3.0 v gs(th) min typ max typ. capacitances c = f (v ds ) parameter: v gs = 0 v, f = 1 mhz 0 10 20 v 40 v ds 2 10 3 10 4 10 pf c ciss coss crss forward characteristics of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd 0 10 1 10 2 10 3 10 a buz110sl i f t j = 25 ?c typ t j = 25 ?c (98%) t j = 175 ?c typ t j = 175 ?c (98%)
buz 110sl data sheet 8 05.99 typ. gate charge v gs = f ( q gate ) parameter: i d puls = 80 a 0 20 40 60 80 100 120 140 nc 170 q gate 0 2 4 6 8 10 12 v 16 buz110sl v gs ds max v 0,8 ds max v 0,2 avalanche energy e as = f ( t j ) parameter: i d = 80 a, v dd = 25 v r gs = 25 w 20 40 60 80 100 120 140 ?c 180 t j 0 50 100 150 200 250 300 350 400 mj 500 e as drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 140 ?c 200 t j 50 52 54 56 58 60 62 64 v 66 buz110sl v (br)dss
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